Full Area Coverage Monolayer SnSe2 on c-cut Sapphire
Full Area Coverage Monolayer SnSe2 on c-cut Sapphire Original price was: $800.00.Current price is: $640.00.
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Full Area Coverage PdSe2 layers on Sapphire
Full Area Coverage PdSe2 layers on Sapphire Original price was: $800.00.Current price is: $640.00.

Full Area Coverage Monolayer WS2 on c-cut Sapphire

Original price was: $800.00.Current price is: $640.00.

This product contains full area coverage WS2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick WS2 sheet. Synthesized full…
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Description
This product contains full area coverage WS2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick WS2 sheet. Synthesized full area coverage monolayer WS2 is highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness.Growth method: Our company synthesizes these monolayers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). This is unlike commonly used MOCVD process wherein defects are very very large and domain sizes are small (10nm-500nm). Our samples are always highly luminescent and highly crystallizedSample Properties

Sample size 1cm x 1cm square shaped
Substrate type (0001) c-cut sapphire
Coverage Full coverage monolayer
Electrical properties 2.0 eV Direct Bandgap Semiconductor
Crystal structure Hexagonal Phase
Unit cell parameters a = b = 0.312 nm, c = 1.230 nm, α = β = 90, γ = 120°
Production method Low pressure Chemical Vapor Deposition (LPCVD)
Characterization methods Raman, photoluminescence, TEM, EDSThis product contains full area coverage WS2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick WS2 sheet. Synthesized full area coverage monolayer WS2 is highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness.

Growth method: Our company synthesizes these monolayers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). This is unlike commonly used MOCVD process wherein defects are very very large and domain sizes are small (10nm-500nm). Our samples are always highly luminescent and highly crystallized

Sample Properties

Sample size 1cm x 1cm square shaped
Substrate type (0001) c-cut sapphire
Coverage Full coverage monolayer
Electrical properties 2.0 eV Direct Bandgap Semiconductor
Crystal structure Hexagonal Phase
Unit cell parameters a = b = 0.312 nm, c = 1.230 nm, α = β = 90, γ = 120°
Production method Low pressure Chemical Vapor Deposition (LPCVD)
Characterization methods Raman, photoluminescence, TEM, EDSThis product contains full area coverage WS2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick WS2 sheet. Synthesized full area coverage monolayer WS2 is highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness.

Growth method: Our company synthesizes these monolayers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). This is unlike commonly used MOCVD process wherein defects are very very large and domain sizes are small (10nm-500nm). Our samples are always highly luminescent and highly crystallized

Sample Properties

Sample size 1cm x 1cm square shaped
Substrate type (0001) c-cut sapphire
Coverage Full coverage monolayer
Electrical properties 2.0 eV Direct Bandgap Semiconductor
Crystal structure Hexagonal Phase
Unit cell parameters a = b = 0.312 nm, c = 1.230 nm, α = β = 90, γ = 120°
Production method Low pressure Chemical Vapor Deposition (LPCVD)
Characterization methods Raman, photoluminescence, TEM, EDSThis product contains full area coverage WS2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick WS2 sheet. Synthesized full area coverage monolayer WS2 is highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness.

Growth method: Our company synthesizes these monolayers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). This is unlike commonly used MOCVD process wherein defects are very very large and domain sizes are small (10nm-500nm). Our samples are always highly luminescent and highly crystallized

Sample Properties

Sample size 1cm x 1cm square shaped
Substrate type (0001) c-cut sapphire
Coverage Full coverage monolayer
Electrical properties 2.0 eV Direct Bandgap Semiconductor
Crystal structure Hexagonal Phase
Unit cell parameters a = b = 0.312 nm, c = 1.230 nm, α = β = 90, γ = 120°
Production method Low pressure Chemical Vapor Deposition (LPCVD)
Characterization methods Raman, photoluminescence, TEM, EDS
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