Full Area Coverage Monolayer SnSe2 on c-cut Sapphire

Specification.

• Identification. Full coverage 100% monolayer SnSe₂ uniformly covered across c-cut sapphire
• Physical dimensions. one centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.
• Smoothness. Atomically smooth surface with roughness < 0.15 nm.
• Uniformity. Highly uniform surface morphology. SnSe₂ monolayers uniformly cover across the sample.
• Purity. 99.9995% purity as determined by nano-SIMS measurements
• Reliability. Repeatable Raman and photoluminescence response
• Crystallinity. High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.
• Substrate. c-cut Sapphire but our research and development team can transfer SnSe₂ monolayers onto variety of substrates including PET, quartz, and SiO2/Si without significant compromisation of material quality.
• Support. 2Dsemiconductors USA is an American owned, regulated, and operated company. Our customers are well-protected by international as well as strict American customer laws and regulations. We give full technical support and guarantee your satisfaction with our well-established customer
• Defect profile. SnSe₂ monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected SnSe₂ using a-bombardment technique.This product contains full area coverage SnSe₂ monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick SnSe₂ sheet. Synthesized full area coverage monolayer SnSe₂ is highly crystalline.Growth method: Our company synthesizes these monolayers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). This is unlike commonly used MOCVD process wherein defects are very very large and domain sizes are small (10nm-500nm).Sample Properties
  

  Sample size	1cm x 1cm square shaped
  Substrate type	Sapphire c-cut (0001)
  Coverage	Full monolayer coverage
  Electrical properties	1.5 eV Indirect Gap Semiconductor
  Crystal structure	Hexagonal Phase
  Unit cell parameters	a = b = 0.380, c = 0.612 nm,  α = β = 90°, γ = 120°
  Production method	Low Pressure Chemical Vapor Deposition (LPCVD)
  Characterization methods	Raman, angle resolved Raman spectroscopy, photoluminescence, absorption spectroscopy TEM, EDS

   

  Specification.

  • Identification. Full coverage 100% monolayer SnSe₂ uniformly covered across c-cut sapphire
  • Physical dimensions. one centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.
  • Smoothness. Atomically smooth surface with roughness < 0.15 nm.
  • Uniformity. Highly uniform surface morphology. SnSe₂ monolayers uniformly cover across the sample.
  • Purity. 99.9995% purity as determined by nano-SIMS measurements
  • Reliability. Repeatable Raman and photoluminescence response
  • Crystallinity. High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.
  • Substrate. c-cut Sapphire but our research and development team can transfer SnSe₂ monolayers onto variety of substrates including PET, quartz, and SiO2/Si without significant compromisation of material quality.
  • Support. 2Dsemiconductors USA is an American owned, regulated, and operated company. Our customers are well-protected by international as well as strict American customer laws and regulations. We give full technical support and guarantee your satisfaction with our well-established customer
  • Defect profile. SnSe₂ monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected SnSe₂ using a-bombardment technique.